| 摘要 |
PURPOSE:To widen the surface area within the same shared area by forming irregularities on the surface of a storage node. CONSTITUTION:After the formation of a gate electrode sidewall insulating film, a silicon nitride film 7 is deposited. Next, the film 7 coated with a resist is exposed using a pattern slightly smaller than the pattern of a storage node electrode 10. Next, an LPD film 9 is deposited on the upper layer of the film 7. The LPD film 9 is left when the resist is removed. Next, after making a storage node contact hole by etching away the silicon nitride film 7 and a magnetized film thereunder, a polycrystalline silicon film is deposited on the whole surface. At this time, the water content in the LPD film 9 is discharged therefrom in the high temperature atmosphere during the polycrystalline silicon depositing step so as to form fine irregularities or holes on the surface of the polycrystalline silicon film on the LPD film 9. Finally, the polycrystalline silicon film doped with arsenic etc., is to be patterned by isotropical dry etching step so that the storage node electrode 10 having irregularities thereon may be formed to widen the surface area thereof. |
