BATCHED-ERASURE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: To obtain the efficient redundant constitution of a batch erasing type nonvolatile semiconductor storage device. CONSTITUTION: The array of a memory cell 31 is physically divided into a data area 36 and a tag area 37 to separately batch-erase the respective areas while sharing a word line 32. In the unit of the areas 36 and 37 sharing one word line, the area 37 holds positional information of a defective memory cell in the area 36. Based on this information, a system executes the using avoiding processing of the defective memory cell. Defective memory cell information is programmed in an inspection process after producing a chip, and ECC is written in the area 37 with respect to this defective memory cell information. By writing fixed data in the area 37, the using prohibition of the area 36 sharing the word line with the area 37 is reported to the system. Even when the area 36 is batch-erased, the area 37 is not erased and defective memory cell positional information is held.