发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To eliminate the variation of bump height during the bump formation and prevent the corrosion of aluminum wiring caused by the permeation of etching solution from the stepped part during barrier metal etching. CONSTITUTION:After forming a bonding pad, a polyimide-based resin 7 is applied, the composition ratio, etc., of an etching solution are adjusted prior to selective etching of the bonding pad part, and the part is applied with etching in a manner to make a taper angle 9 of the side wall to be small. Then, it is applied with vapor-deposition for a barrier metal 5, bump growth, and selective etching of the barrier metal.</p>
申请公布号 JPH06112209(A) 申请公布日期 1994.04.22
申请号 JP19920259306 申请日期 1992.09.29
申请人 MATSUSHITA ELECTRON CORP 发明人 MORITA HIROHIKO
分类号 H01L21/60;H01L21/321;(IPC1-7):H01L21/321 主分类号 H01L21/60
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