发明名称 SEMICONDUCTOR OPTICAL WAVEGUIDE
摘要 PURPOSE:To easily form the rib height of a rib type optical waveguide with good accuracy. CONSTITUTION:An AlGaAs first clad layer 2, a GaAs guide layer 3, an AlGaAs second clad layer 4, a GaInP etching stopper layer 5 and an AlGaAs third clad layer 6 are successively laminated on a GaAs substrate 1. The third clad layer 6 and the etching stopper layer 5 are partly etched, by which the rib type optical waveguide is formed. Since the structure inserted with the etching stopper layer 5 between the clad layers 4 and 6 is adopted, the rib height is formed with good accuracy and the optical waveguide having the good characteristics is uniformly obtd.
申请公布号 JPH06109934(A) 申请公布日期 1994.04.22
申请号 JP19910000645 申请日期 1991.01.08
申请人 NEC CORP 发明人 HAMAMOTO KIICHI
分类号 G02B6/122;G02B6/12;G02B6/13;H01L27/15;(IPC1-7):G02B6/12 主分类号 G02B6/122
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