| 摘要 |
PURPOSE:To provide a semiconductor element with current limiting function having a high withstanding voltage which prevents destruction of a thyristor due to an overcurrent with a simple circuit constitution while making the most of the advantages of a thyristor. CONSTITUTION:A current limiting means 2 is connected in series between a cathode 7 of a thyristor 1 and a reference power source (ground), and a cathode gate 6 is connected to a reference power terminal through a gate voltage suppressing means 3. Though the overcurrent exceeding the current set value of the current limiting means 2 tries to flow to the thyristor 1 and the current limiting means 2 connected in series to it, the rise of the potential difference between both ends of the current limiting means 2 is suppressed because the potential of the cathode gate 6 is fixed by the gate voltage suppressing means 3, and the current limiting means 2 always allows a prescribed current to flow. Thus, an overcurrent of the thyristor 1 is prevented. |
