| 摘要 |
PURPOSE:To manufacture a semiconductor memory device having different constitution of a data output by providing a decoding means by which memory cells and arrays are divided into plural blocks and the selection number of memory cells, arrays and blocks are changed. CONSTITUTION:Memory cells and arrays are divided into 16 blocks 7A to 7P in the case of X8 constitution, block addresses (Ba) data Z0in to Z3in are changed to positive and negative amplified signals Z0 to Z3 and IZ0 to IZ3 to be outputted, by Ba buffers 511 to 514. Those signals are inputted to blocks 7A to 7P by a Ba decoder 52A provided whith NOR gates NOR1 to 8 and NAND gates NAND1 to 16, and one block is always activated. When a device has X16 constitution, a signal Z3 and IZ3 are fixed at a GRD level, two lines among eight signal lines from buffers 511 to 514 are always activated. Thus, devices having the X8 and X16 constititions are constituted in the same one chip. |
