Electron-beam lithography with induced currents.

摘要

An electron-beam lithographic process using induced currents is disclosed. An electric field above the avalanche threshold is induced across a resist layer on a substrate. An area of the resist layer is exposed to an electron-beam, causing an induced avalanche-type current in the resist in the area of exposure, for creation of a fine integrated circuit feature. The field may be variable to control the intensity of the avalanche effect.