发明名称 Semiconductor memory device adapted for preventing a test mode operation from undesirably occurring
摘要 When a pre-shipment test of a SRAM is requested, a pulse signal PL having a pulse width exceeding a predetermined time length is applied through a terminal 62. A pulse width detecting circuit 80 detects the pulse width of the applied pulse signal to provide a holding signal HD. A test mode signal holding circuit 90 holds an externally applied test mode request signal TM' in response to the holding signal HD. After the completion of the pre-shipment test, pulse width detecting circuit 80 is disabled by a fusion of a fuse 71. Fuse 71 is fused after the pre-shipment test is conducted, whereby the test mode operation is prevented from undesirably occurring.
申请公布号 US5305267(A) 申请公布日期 1994.04.19
申请号 US19930051405 申请日期 1993.04.23
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HARAGUCHI, YOSHIYUKI;ARITA, YUTAKA
分类号 G01R31/28;G11C11/401;G11C11/413;G11C29/00;G11C29/14;G11C29/46;H01L21/66;H01L27/10;(IPC1-7):G11C29/00 主分类号 G01R31/28
代理机构 代理人
主权项
地址