发明名称 |
Semiconductor memory device adapted for preventing a test mode operation from undesirably occurring |
摘要 |
When a pre-shipment test of a SRAM is requested, a pulse signal PL having a pulse width exceeding a predetermined time length is applied through a terminal 62. A pulse width detecting circuit 80 detects the pulse width of the applied pulse signal to provide a holding signal HD. A test mode signal holding circuit 90 holds an externally applied test mode request signal TM' in response to the holding signal HD. After the completion of the pre-shipment test, pulse width detecting circuit 80 is disabled by a fusion of a fuse 71. Fuse 71 is fused after the pre-shipment test is conducted, whereby the test mode operation is prevented from undesirably occurring. |
申请公布号 |
US5305267(A) |
申请公布日期 |
1994.04.19 |
申请号 |
US19930051405 |
申请日期 |
1993.04.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HARAGUCHI, YOSHIYUKI;ARITA, YUTAKA |
分类号 |
G01R31/28;G11C11/401;G11C11/413;G11C29/00;G11C29/14;G11C29/46;H01L21/66;H01L27/10;(IPC1-7):G11C29/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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