| 摘要 |
<p>PURPOSE:To vertically finish the cross section of a pattern at the time of forming a photomask with a multilayer pattern of the antireflection film and light-shielding metallic thin film formed on a glass substrate. CONSTITUTION:Electron-beam exposure, development and post baking are carried out, the product is resist-patterned, and the antireflection films 2 and 2' and the light-shielding metallic thin film 3 are simultaneously dry-etched with the patterened product as the mask. In this case, the oxygen content of the gaseous reactant is changed, and etching is conducted in a stepwise manner to form the pattern.</p> |
