发明名称 |
Micro-miniature structure fabrication. |
摘要 |
<p>In the fabrication of a free-standing miniaturized structure in a range of about 10 to 20 mu m thick, a method based on a sacrificial system includes the steps of selecting a substrate material, depositing on the substrate material a sacrificial layer 58 of material and patterning the sacrificial layer to define a shape. A photoresist layer 62 of material is deposited on the sacrificial layer and patterned by contrast-enhanced photolithography to form a photoresist mould. Upon the mould there is plated a metallic layer 68 of material. The electroplated structure conforms to the resist profile and can have a thickness many times that of conventional polysilicon microstructures. The photoresist mould and the sacrificial layer are thereafter dissolved using etchants to form a free standing metallic structure in a range of about 10 to 20 mu m thick, with vertical to lateral aspect ratios of 9:1 to 10:1 or more. <IMAGE></p> |
申请公布号 |
EP0592094(A2) |
申请公布日期 |
1994.04.13 |
申请号 |
EP19930306702 |
申请日期 |
1993.08.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FAN, LONG-SHEN;ZAPPE, HANS HELMUT |
分类号 |
C23C28/00;B81B5/00;B81C99/00;G03F7/00;G03F7/11;G03F7/26;H01L21/306;H02N1/00;(IPC1-7):G03F7/00 |
主分类号 |
C23C28/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|