发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent short-circuit of the lead wire by absorbing connecting metal running out with a recess provided near the connection point of the lead wire when the lead wire having a plating layer on the surface thereof is connected to the electrode provided on the semiconductor element. CONSTITUTION:A lead wire 13 having a tin plating 13' on the surface thereof is connected to a projected electrode 12 formed on a semiconductor element 1 employing a gold-tin eutectic alloy 15. In this process, a recess 17 is formed on the lead wire near a point surrounding the electrode 12 to absorb excess alloy running melted by heat during the connection through the surface tension. This eliminates metal grain mass which otherwise causes a short-circuit of the lead wire. Even if a lead wire having a thick plating layer is used to improve the wetting property of the solder, the reliability of the element will not be lowered.</p>
申请公布号 JPS5591133(A) 申请公布日期 1980.07.10
申请号 JP19780164876 申请日期 1978.12.27
申请人 发明人
分类号 H01L21/60;H01L21/58 主分类号 H01L21/60
代理机构 代理人
主权项
地址
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