| 摘要 |
<p>PURPOSE:To improve the performance of TFTs without adding an insulating film formation process by sputtering or hydrogen plasma process by forming wiring material in an atmosphere containing hydrogen. CONSTITUTION:After the formation of contact holes 8, 9 and 10 in a layer insulating film 7, wiring metal material is formed and patterned into source wiring 11, drain wiring 13 and gate wiring 12, a TFT being completed. The wiring metal material is formed in an atmosphere containing hydrogen. In the process, hydrogen passes through the layer insulating film 7 and reaches a first polysilicon layer 2, and reduces the dangling bond in the polysilicon and the state of the boundary between the polysilicon and a gate insulating film 3. This makes unnecessary a process dedicated to the improvement of TFT performance.</p> |
