| 摘要 |
<p>PURPOSE:To perform a vapor growth of an insulating or conductive thin film having good film properties on a semiconductor layer without changing the film properties of the semiconductor layer of hydrogenated group IV, by performing the vapor growth of the insulating or conductive thin film on the surface of the hydrogenated group IV amorphous semiconductor film formed on a substrate at specific substrate temperature, growth time an growth film thickness. CONSTITUTION:A gate electrode 2 is formed on a substrate 1 and an SiNX3 is formed as a gate insulating film Next, a-Si:H4 is formed at a substrate temperature of 230 deg.C. Then, an SiNx is formed as a channel protective film 5. In this case, when a substrate temperature, a growth time and a growth film thickness are respectively shown in T, t and d, the growth time t is satisfied with 0<=t<=(d/pi)2/1 and 12X10<-2>.exp (-1.53/k.T) under conditions of 250 deg.C<=T<=400omicronC and 5nm<=d<=1000nm (where k is a Boltzmann constant and piis the ratio of circumference of circle to its diameter). If the vapor growth of the thin film is performed in this conditions, film properties of a hydrogenated group IV amorphous semiconductor are not changed.</p> |
