| 摘要 |
PURPOSE: To enable a polymer film formed on the inner wall of a via-contact hole and the side wall of a photosensitive film when a via-contact is etched to be removed off without etching a metal layer. CONSTITUTION: A polymer film 7 formed on the inner side wall of a via contact is removed off without corroding a metal layer 1 when a via contact is subjected to etching in an after process where a via-contact is formed in the manufacture of a semiconductor device, wherein deionized water is diluted with CO2 gas, and CO2 gas-loaded deionized water is used for cleaning after the via contact undergoes etching, whereby a protective film 9 of Al2 O3 is formed on the surface of the metal layer 1. By this setup, the polymer film 7 formed on the inner side wall of a via contact hole A and a part of a photosensitive film 5 can be removed off with stripping solvent without corroding the metal layer 1.
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