Method for production of SOI substrate.

摘要

SOI (silicon-on-insulator) substrates are efficiently produced by a method which comprises superposing and bonding at least three single crystal silicon wafers through the medium of a SiO2 film formed on the surface of each of the wafers and cutting the bonded wafers along planes perpendicular to the direction of superposition thereof. The cutting can be infallibly attained with high dimensional accuracy without entailing such adverse phenomena as the vibration of the blade of a cutting tool by providing at the portions destined to be cut the grooves for guiding the blade of the cutting tool in advance of the cutting work.