摘要 |
PURPOSE:To ensure a large amt. of nitrogen solid solution by an easy process without deteriorating the quality or strength of material and to efficiently produce a silicon carbide heating element having low specific resistance. CONSTITUTION:Silicon carbide powder as starting material is mixed with 1-30wt.% silicon nitride powder and further mixed with 5-30wt.% carbon powder basing on the amt. of the silicon nitride powder. The resulting mixture is compacted into a prescribed shape with a binder and sintered at 1,900-2,400 deg.C in an atmosphere of gaseous nitrogen. |