发明名称 |
Semiconductor device having a semiconductor substrate with reduced step between memory cells |
摘要 |
A semiconductor device comprising a semiconductor substrate, a plurality of memory cell regions each having a plurality of memory cells disposed on the semiconductor substrate, a word line formed in a first level above the semiconductor substrate, a bit line formed in a second level above the first level, and a backing line having a lower resistance than the word line and formed in a third level above the second level. A dummy bit line is formed in the second level outside the memory cell region so as to reduce the step formed at the periphery of the memory cell region. The dummy bit line is also used to interconnect the word line and the backing line so that an electrical connection therebetween is stabilized.
|
申请公布号 |
US5300814(A) |
申请公布日期 |
1994.04.05 |
申请号 |
US19920915898 |
申请日期 |
1992.07.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MATSUMOTO, SUSUMU;HASHIMOTO, SHIN;YAMADA, TOSHIO;NAKATA, YOSHIRO |
分类号 |
H01L21/768;H01L21/8242;H01L23/522;H01L23/528;H01L27/10;H01L27/105;H01L27/108;(IPC1-7):H01L23/48;H01L29/46 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|