发明名称 Active matrix substrate for liquid-crystal display and method of fabricating the active matrix substrate
摘要 In an active matrix substrate for a liquid-crystal display, a plurality of individual transparent electrodes are arranged in the form of an array, and an array of thin-film transistors is connected to the transparent electrodes for driving the same. Each of the thin-film transistors includes a source region and a drain region which are formed such that impurities are doped at high concentration, an active layer composed of a silicon thin film which is in contact with the source and drain regions and in which at least a part of the silicon thin film covers the source and drain regions, an insulating film which covers the source and drain regions and the active layer, and a gate electrode on the insulating film. Each of the individual transparent electrodes is composed of a silicon thin film contiguous to the active layer of the thin-film transistor and a metal silicide on the silicon thin film. In the active matrix substrate, metal silicide is formed, in the form of an island, onto the silicon thin film on the entire surface of which the individual transparent electrodes are formed. The active matrix substrate of the invention does not use a transparent conductive film made of indium as indium tin oxide and oxide of tin. A pair of drain regions may be so formed as to electrically shield the source region. A method of fabricating the active matrix substrate is also disclosed.
申请公布号 US5300449(A) 申请公布日期 1994.04.05
申请号 US19920963387 申请日期 1992.10.16
申请人 NEC CORPORATION 发明人 OKUMURA, FUJIO
分类号 G02F1/136;G02F1/1343;G02F1/1368;H01L21/336;H01L29/45;H01L29/786;(IPC1-7):H01L21/265 主分类号 G02F1/136
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