发明名称 |
Metallic contact surfaces for semiconductor substrate - with opposing edges of adjacent contacts surfaces parallel to crystallographic grid direction of semiconductor |
摘要 |
The metallic contact surfaces (2) lie adjacent one another on the surface of the semiconductor substrate (1) with their opposing edges at a relatively sort distance apart. These edges lie parallel to a crystallographic grid direction of the semiconductor. Pref. the contact surfaces comprise a multi-layer system with AuSn alloy, Ti, Pt, and Au layers in succession. A narrow contact surface strip (3) is pref. provided between the opposing edges of the adjacent contact surfaces. ADVANTAGE - Prevents edge roughness of metallic contact layers. |
申请公布号 |
DE4232814(A1) |
申请公布日期 |
1994.03.31 |
申请号 |
DE19924232814 |
申请日期 |
1992.09.30 |
申请人 |
ALCATEL SEL AG, 70435 STUTTGART, DE |
发明人 |
REEMTSMA, JAN-HINNERK, DR.RER.NAT., 7015 KORNTAL-MUENCHINGEN, DE |
分类号 |
H01L23/482;H01L23/528;H01L29/04;H01L29/417;(IPC1-7):H01L23/52;H01L21/285 |
主分类号 |
H01L23/482 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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