HIGH POWER SOLID STATE R.F. AMPLIFIER

摘要

Although known because of the high packaging inductances and thought to be wholly unsuitable for RF amplifiers, high voltage power switching MOSFETs (11, 12, 41, 42) of the type having coplanar leads having inductances on the order of between 8nH and 15nH are used in an RF amplifier. The individual devices (11, 12, 41, 42) operate on a high impedance load line to render the high inductance of the coplanar leads insignificant. The circuit configuration presents a high impedance to the output (14) via balun (20), eliminating the need for expensive combiners and low inductance packaging.