| 摘要 |
The present invention relates to hermetically sealed integrated circuits. These circuits comprise a circuit subassembly having a primary passivation and one or more bond pads (2) opened in the passivation. To the primary passivation is applied a silicon-containing ceramic layer (4) by a physical vapor deposition (PVD) or CVD process. In addition, the ceramic layer (4) also covers a portion of the bond pads (2) such that the opening is smaller than that present in the primary passivation and the bond pads are thereby more effectively sealed. <IMAGE> |
