Chemical vapor deposition of metal chalcogenide films

摘要

A process for depositing a film of metal chalcogenide is disclosed. The process comprises providing a single source of a metal chalcogenide and heating said source to a temperature sufficient to sublime the single source under a pressure ranging from 0.0001 to 760 torr so that the sublimate is delivered into a reaction zone. Within this reaction zone, a substrate is deposed upon which deposition may occur. The reaction zone is heated to approximately 200 degrees to 800 degrees C. The sublimate is passed through this reaction zone and over the substrate to produce a thin film of metal chalcogenide which is deposited upon the substrate.