| 摘要 |
<p>PURPOSE: To realize the element separating method for a semiconductor device for forming the separating region having a trench (groove) width less than the limit of photoetching technology and the element separating method for the semiconductor device, which can fill the inside of the groove without the generation of the bird's beak phenomenon associated with the groove etching. CONSTITUTION: The layer including at least the first conductor layer is formed on a semiconductor substrate 10. The first conductor layer in corresponding with a predetermined separating region is selectively removed. The remaining first conductor layer undergoes thermal oxidation. With the thermally oxidized first conductor layer as a mask, the semiconductor substrate 10 is etched, and a groove 22 is formed. After a buffer oxide film 24 is formed at the inner wall of the groove, the second conductor layer is formed on the semiconductor, and the inside of the groove 22 is filled with insulating material. After etch back is performed until the second insulating film 14 is sufficiently exposed, the exposed second insulating film 14 is removed.</p> |
