| 摘要 |
The present invention discloses a method to avoid additional masking steps in the manufacturing of semiconductor components, by generating an asymmetrical process step which will be self-aligned to an earlier made material structure (20) on a substrate (30), by in the asymmetrical process step illuminating the substrate at a given angle of incidence (40) to create a shadowed region (25), and utilizing the shadowed region (25), which in the asymmetrical process step is shadowed by the previously formed material structure (20), whereby, if the region (25) is coated, the process step, will not act on this coating, and, if the region (25) is not coated, the process step will still not be able to act on the region, respectively, by what means the region (25) for this process step thus will act as if there were a mask present, without having to perform any previous masking step. |
