Raw material for vaporising dielectric thin layers - comprises organic metal cpd. dissolved in THF

摘要

Raw material for vaporising dielectric thin layers of the oxide system is claimed, in which the organic metal cpd. is dissolved in THF. The organic metal cpd. is dissolved in a solvent contg. THF. The metal atom of the organic metal-raw material is a metal selected from Pb, Ti, Zr and alkaline earths. The material is a cpd., in which the metal atom is coupled via oxygen atoms to the organic gps.. The metal atom is esp. Sr, Ba or Ti. The cpd. is esp. metal-acetylacetonate, -dipivaloylmethanate, -alkoxide, -hexafluoroacetylacetonate, -pentafluoropropanoyl pivaloylmethanate, -cyclopentadienyl or one or more derivs. of these cpds., in which the metal is Pb, Ti, Zr or alkaline earth; or Sr- and/or Ba-, or Ti-dipivaloylmethanate cpd. and Ti dipivaloylmethanate; or Si- and/or Ba-dipivaloylmethanate and Ti isopropoxide. USE - Used to mfr. capacitors for storage appts. using a CVD process (claimed).