| 摘要 |
<p>A process for forming implanted regions with lowered channelling risk on semiconductors, wherein the semiconductor devices include at least one layer of polycrystalline silicon which covers all isolation regions and active areas which are liable to a channelling phenomena and wherein the process includes masking the areas or regions to be implanted on the polycrystalline layer, implanting a first dopant species having a high atomic weight to amorphousize the polycrystalline silicon in any unmasked areas, removing the masking layer, and implanting a second dopant species over the entire semiconductor. <IMAGE></p> |
