GROWTH OF BETA-SIC THIN FILMS AND SEMICONDUCTOR DEVICES FABRICATED THEREON
摘要
GROWTH OF BETA-SiC THIN FILMS AND SEMICONDUCTOR DEVICES FABRICATED THEREON Device quality thin films of Beta-SiC are epitaxially grown on substrates of Alpha-Sic.
申请公布号
CA1327935(C)
申请公布日期
1994.03.22
申请号
CA19880581147
申请日期
1988.10.25
申请人
NORTH CAROLINA STATE UNIVERSITY
发明人
DAVIS, ROBERT F.;KONG, HUA-SHUANG;GLASS, JEFFREY T.;CARTER, CALVIN H., JR.
