| 发明名称 |
Epitaxial silicon starting material |
| 摘要 |
A silicon starting material for fabricating integrated circuits is desrcibed that comprises a silicon wafer substrate material and a first epitaxial layer grown on the wafer substrate which eliminates stacking faults in the subsequent fabrication of a semiconductor device.
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| 申请公布号 |
US5296047(A) |
申请公布日期 |
1994.03.22 |
| 申请号 |
US19920984725 |
申请日期 |
1992.12.01 |
| 申请人 |
HEWLETT-PACKARD CO. |
发明人 |
FELLNER, RICHARD A. |
| 分类号 |
H01L21/20;H01L21/322;H01L21/8249;H01L27/06;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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