| 摘要 |
<p>PURPOSE:To stabilize the lateral mode of a semiconductor light emitting device by effectively locking in the lateral light of the laser. CONSTITUTION:An active layer 3 is formed of Ga1-XAlXAs (its refractive index is n3) clad layers 2, 4 are formed of Ga1-XAlYAs(its refractive index are n2, n), and a stripe region 6 is formed of Ga1-YAlZAs (its refractive index is n6). When a laser is fabricated in the composition of x>y, z<x<y their refractive indexes become n2, n4<n6<n3. In is considered that the vertical light distribution of the layer 3 is largely extended in the stripe region, normally distributed at the outside, and their refractive indexes become large effectively in the stripe portion. Accordingly, the light is locked in due to the difference of the refractive indexes. According to this configuration the light guide may be simply realized, and stable lateral mode may be obtained. Since the light is extended to the stripe portion 3, the light output is not expanded in vertical direction with respect to the junction.</p> |
