发明名称 SEMICONDUCTOR DEVICE BONDING WIRE
摘要 PURPOSE:To provide bonding wires used for a semiconductor device, where wires are prevented from causing a short circuit even if they come into contact with each other, kept high in insulating properties, hardly clog a capillary and deteriorate in bonding properties, can be surely bonded, and hardly react with sealing resin after a semiconductor device is sealed with resin. CONSTITUTION:A ceramic layer is set in thickness 1/500 to 1/25 as large as the diameter of a wire main body, whereby wires are kept high in resistance to abrasion, the ceramic layer is hardly separated off if the wire comes into contact with a capillary, the bonded wires are kept high in insulating properties as required when they come into contact with each other, and as the ceramic layer is low in reactivity with sealing resin, it hardly reacts with sealing resin even if a semiconductor device is kept at a high temperature after it is sealed with resin.
申请公布号 JPH0677274(A) 申请公布日期 1994.03.18
申请号 JP19920228977 申请日期 1992.08.27
申请人 MITSUBISHI MATERIALS CORP 发明人 ISHII TOSHINORI;UCHIYAMA NAOKI
分类号 H01L21/60 主分类号 H01L21/60
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