SYSTEM AND METHOD FOR SELECTIVELY LASER PROCESSING A TARGET STRUCTURE OF MATERIALS OF A MULTIMATERIAL, MULTILAYER DEVICE

摘要

A laser system and processing method exploits the absorption contrast between the materials from which a link (12) or film and an underlying substrate (22) are made to effectively remove the link or film from the substrate. Laser output in a wavelength range of 1.2 to 2.0 (my)m (30) optimizes the absorption contrast between many high conductivity materials (e.g., metals) or resistive films and silicon substrates and permits the use of laser output in a wider range of energy or power levels, pulse widths, without risking damage to the silicon substrates or adjacent circuit structures. Existing link or film processing laser systems can be readily modified to operate in the 1.2 to 3.0 (my)m range. The laser system and processing method also exploits a wavelength range in which functional or active dedicated devices, having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively trimmed without inducing malfunctions or function shifts in the processed devices.