发明名称 |
Surface emission type semiconductor laser |
摘要 |
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam is parallel to the direction of said shorter sides.
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申请公布号 |
US5295148(A) |
申请公布日期 |
1994.03.15 |
申请号 |
US19930013024 |
申请日期 |
1993.02.02 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MORI, KATSUMI;ASAKA, TATSUYA;IWANO, HIDEAKI;KONDO, TAKAYUKI |
分类号 |
H01L33/00;H01S5/183;H01S5/42;(IPC1-7):H01S3/19 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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