| 摘要 |
PURPOSE:To make it possible to use fewer processes to manufacture a semicon ductor memory wherein only the source and drain diffusion layers in the periph eral circuit area are silicified. CONSTITUTION:A memory cell array 13 is covered with a cell plate 34, and the source and drain diffusion layers 24 in the peripheral circuit area 14 are then silicified. This makes unnecessary a coating film dedicated to covering the memory cell array 13, and thus processes, such as deposition and patterning, therefor are not as well required. |
