发明名称 Piezoelectric Semiconductor and Process for Production Thereof
摘要 A piezoelectric semiconductor is a single crystal composed mainly of ZnO having properties such as electrical conductivity of 10<-><1><1> SIMILAR 10<-><3> 1/ OMEGA .cm suitable for use as an acoustoelectric element, by adding a given amount of H2O2 to the alkali solvent, or by using NH4OH in the alkali solvent, or by doping the ZnO single crystal with Li or a trivalent metal. The piezoelectric semiconductor can be suitably used as a ultrasonic transducer material of acoustoelectric type and can also be used as a material for ultrasonic amplification, an surface acoustic wave filter, a piezoelectric transducer, a fluorescent material for emitting a low-velocity electron beam, etc.
申请公布号 CA2105258(A1) 申请公布日期 1994.03.09
申请号 CA19932105258 申请日期 1993.08.31
申请人 NGK INSULATORS, LTD. 发明人 ASAI, YUJI;IMAI, OSAMU
分类号 C30B7/00;H01L41/18;H03H3/00;H03H3/04;H03H9/02 主分类号 C30B7/00
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