发明名称 ECR plasma reaction apparatus having uniform magnetic field gradient
摘要 A plasma reaction apparatus has main and auxiliary magnetic field generating coils for generating a magnetic field which has a gradient of no more than 50 gauss/cm in the axial direction and a difference between the axial magnetic field gradient and the magnetic field gradient ten centimeters from the axis of no more than 10 gauss/cm for processing a semiconductor substrate. The plasma reaction apparatus is able to generate a high density, uniform plasma so that the semiconductor substrate is uniformly processed at high speed.
申请公布号 US5292395(A) 申请公布日期 1994.03.08
申请号 US19920885603 申请日期 1992.05.19
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUJIWARA, NOBUO
分类号 H01L21/285;H01J37/32;H01L21/302;H01L21/3065;H05H1/18;(IPC1-7):H01L21/00 主分类号 H01L21/285
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