发明名称 |
ECR plasma reaction apparatus having uniform magnetic field gradient |
摘要 |
A plasma reaction apparatus has main and auxiliary magnetic field generating coils for generating a magnetic field which has a gradient of no more than 50 gauss/cm in the axial direction and a difference between the axial magnetic field gradient and the magnetic field gradient ten centimeters from the axis of no more than 10 gauss/cm for processing a semiconductor substrate. The plasma reaction apparatus is able to generate a high density, uniform plasma so that the semiconductor substrate is uniformly processed at high speed.
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申请公布号 |
US5292395(A) |
申请公布日期 |
1994.03.08 |
申请号 |
US19920885603 |
申请日期 |
1992.05.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJIWARA, NOBUO |
分类号 |
H01L21/285;H01J37/32;H01L21/302;H01L21/3065;H05H1/18;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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