| 发明名称 |
Elevated CMOS |
| 摘要 |
A new class of CMOS integrated circuits, wherein the PMOS and NMOS devices are both configured as vertical transistors. One trench can contain a PMOS device, an NMOS device, and a gate which is coupled to control both the PMOS device and the NMOS device. Latchup problems do not arise, and n+ to p+ spacing rules are not required.
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| 申请公布号 |
US5293053(A) |
申请公布日期 |
1994.03.08 |
| 申请号 |
US19910655500 |
申请日期 |
1991.05.01 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MALHI, SATWINDER S.;SUNDARESAN, RAVISHANKAR;MAHANT-SHETTI, SHIVALING S. |
| 分类号 |
H01L21/8238;H01L21/8234;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L29/78;(IPC1-7):H01L27/02;H01L27/01;H01L29/06 |
主分类号 |
H01L21/8238 |
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