| 摘要 |
PURPOSE:To eliminate wafer crack during fabrication of a light emission diode array and to provide a light emission diode array producing optical output stably while suppressing deterioration. CONSTITUTION:A buffer layer 3 and a working epitaxial layer 2 are formed through embedded selective epitaxial growth on a substrate layer 4. Furthermore, Zn is diffused in a predetermined region of the working epitaxial layer 2 using a selective diffusion layer 5 to form an epitaxial layer 12 composed of a Zn diffusion layer. Positive electrode 6 and negative electrode 7 are then provided, respectively, on the top face of the Zn diffusion layer 1 and the rear surface of the substrate layer 4 while furthermore a passivation film 8 is formed on the surface at the side of Zn diffusion. |
