FORMATION OF RESIST PATTERN

摘要

PURPOSE:To form a resist pattern which allows high aspect ratio by using material which has photosensitive component absorbance of a prescribed value or more on a G line and non-photosensitive component absorbance of a prescribed value or more as photoresist. CONSTITUTION:Laser beams projected from an He-Cd laser 1 (wavelength 325) are separated in two directions by a beam splitter 2. The separated laser beams are passed through diaphragms 3a and 3b and are reflected by mirrors 4a and 4b. Then, the beams are passed through filters 5a and 5b and are permitted to be parallel light by collimating lenses 6a and 6b. Thus, the two luminous fluxes passed through the collimating lenses 6a and 6b are permitted to interfere and a diffraction grating pattern with 0.36mum or shorter pitch is formed on photoresist 7 applied on a base board 8. The absorbance of the photoresist for photosensitive component at the G line (438nm) is permitted to be 0.6 or more and the absorbance of the non-photosensitive component is permitted to be 0.2 or more.