发明名称 |
Method of making a mushroom-shaped gate electrode of semiconductor device |
摘要 |
A mushroom-shaped gate electrode has a lower end in a recess in a semiconductor active layer on a semiconductor substrate. The gate electrode has an enlarged head. A metallic side wall is disposed on a portion of the leg of the gate electrode adjacent the head. Thus, the gate length of a semiconductor device, such as a field effect transistor, is reduced while the effective cross-sectional area of the gate electrode is increased whereby the noise characteristics of the semiconductor device are improved.
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申请公布号 |
US5288654(A) |
申请公布日期 |
1994.02.22 |
申请号 |
US19930014857 |
申请日期 |
1993.02.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KASAI, NOBUYUKI;SAKAMOTO, SHINICHI;SONODA, TAKUJI;YAGI, TETSUYA |
分类号 |
H01L21/28;H01L21/285;H01L21/3213;H01L21/338;H01L29/423;H01L29/47;H01L29/812;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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