Pseudo-static random access memory

摘要

In a pseudo-static random access memory of the invention, refresh operations are conducted in a normal mode and a self-refresh mode. The memory includes a plurality of bit-line pairs each having two bit lines, a precharge voltage generating circuit for precharging the plurality of bit-line pairs to a first potential level during a precharge period in the normal mode, the circuit being electrically connected to the plurality of bit-line pairs during the precharge period in the normal mode; and bit line discharge circuit for discharging the bit-line pairs during a precharge period in the self-refresh mode, thereby decreasing the potential level of the bit-line pairs to a second potential level which is below the first potential level.