System for igniting a plasma for thin film processing

摘要

A system for igniting a plasma in thin film processing is shown whereby matching network impedances are varied to effect voltage changes. Shunt and series capacitors vary around a limited range so as to achieve substantially all possibilities. A programmed routine of varying in phase, out of phase, and 90 degrees apart in phase is accomplished with a range +/-10% of full variation around some prior value likely to support ignition.