发明名称 |
Dynamic random access memory with low noise characteristics |
摘要 |
A dynamic random access memory (DRAM) with low noise characteristics comprises a plurality of memory cells each consisting of a pair of reference memory cells respectively arranged between a word line and a pair of adjacent bit lines. The reference memory cells store signals of opposite levels corresponding to one bit of information. Each of the reference memory cells consists of a capacitor and switching transistor. One end of the capacitor is connected to the collector of the transistor. The other end of the capacitor is connected to one of the pair of bit lines adjacent thereto. The base of the transistor is connected to the word line, and the emitter of the transistor is completed to receive a reference voltage.
|
申请公布号 |
US5289421(A) |
申请公布日期 |
1994.02.22 |
申请号 |
US19910665261 |
申请日期 |
1991.03.05 |
申请人 |
KOREA ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KOREA TELECOMMUNICATIONS AUTHORITY |
发明人 |
LEE, JIN-HYO;LEE, KYU-HONG |
分类号 |
G11C11/401;G11C11/404;G11C11/4099;H01L21/8229;H01L27/102;(IPC1-7):G11C7/02 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|