OXIDATION PROTECTING THIN FILM

摘要

forming a nitride silicon layer (13), a polycrystalline silicon layer (14), and a nitride silicon layer (15), sequentially on the area of a silicon layer (12) which is formed on the semiconductor substrate (11) and will not be oxidized selectively, and forming a side-wall nitride silicon layer (17) on the side wall of the above layers with the nitride silicon, polycrystalline silicon, and the nitride silicon.