| 摘要 |
PURPOSE:To provide a method for forming a transfer transistor having high reliability and a small size in a MOS RAM. CONSTITUTION:An interlayer insulating film 8 covering source.drain regions 6, 7 and a gate electrode 4 is formed, a bit line fetch layer 9 is formed thereon, and an opening is provided at a predetermined position. Then, a sidewall 13 is formed on an inner wall of the opening, with the layer 9 and the sidewall 13 as masks the film 8 is etched to form a contact window 14, a thin conductor layer 15 is further formed, the layers 9, 15 are then patterned. |
