| 摘要 |
PURPOSE: To provide a method for forming one form of DRAM cell by forming transistors and capacitors. CONSTITUTION: A capacitor of a cell 10 is formed in a substrate 12. The capacitor has a first capacitor electrode 16 and a second capacitor electrode 20. A dielectric layer 18 is formed as a capacitor dielectric between the electrodes. A first transistor current electrode 36 is mounted on the electrode 16 and formed to be connected electrically to this capacitor electrode. A channel region 38 is formed to be mounted on the electrode 36. A second transistor current electrode 40 is formed to be mounted on the region 38. A conductive layer 30 is formed adjacent to the side of the region 38 and isolated from the substrate 12 by the layers 22, 28. The layer 30 functions as a gate electrode of the transistor, and a sidewall dielectric 34 functions as a gate dielectric. |
