发明名称 Substrate deposition chamber - contains a gas at an adjusted partial pressure to apply thin coating of HT superconductive material through a particle stream
摘要 The appts. to coat a substrate surface through a stream of particles detached from a material, has a coating chamber (4) containing a gas set to a partial pressure (p) between 10-3 mbar and 10 mbar and a laser ablation appts. The substrate body (3) to be coated is aligned so that the levels of the surfaces (3a) to be coated are generally at right angles to the line of the spread particle stream (5) of coating material. USE/ADVANTAGE - The assembly is for the development of a coating of a metal oxide HT superconductive material in a thin layer. The appts. gives a thin coating deposit over large surfaces, irrespective of the coating material, with smooth surfaces and good homogeneity.
申请公布号 DE4226864(A1) 申请公布日期 1994.02.17
申请号 DE19924226864 申请日期 1992.08.13
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 ROAS, BERNHARD, DIPL.-PHYS. DR., 8520 ERLANGEN, DE;HOLZAPFEL, BERNHARD, DIPL.-PHYS., 8501 ECKENTAL, DE;KUEHNL, MANFRED, 8551 HEROLDSBACH, DE;SCHULTZ, LUDWIG, DIPL.-PHYS. DR., 8526 BUBENREUTH, DE
分类号 C23C14/28;(IPC1-7):C23C14/28;C04B35/50;C23C14/08 主分类号 C23C14/28
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