发明名称 METHOD AND APPARATUS FOR DEVELOPMENT OF RESIST
摘要 PURPOSE:To provide a resist developing method and its apparatus wherein the temperature of a developing solution can be controlled precisely and a developing distribution after a developing operation is improved, regarding the resist developing method and its apparatus wherein a resist layer formed on the surface of a wafer and exposed is developed. CONSTITUTION:The inside of a container 2 in a coating/developing apparatus 1 can be set so as to form the same atmosphere as that in a clean room. A wafer 6 is sucked onto a chuck 4 inside the container 2. An evacuation port 10 which evacuates the air inside the container 2 is closed and an evacuation device is stopped. A developing solution is supplied onto the wafer 6 from a developing-solution supply device 8, a resist layer on the wafer 6 is developed. At this time, the inside of the container 2 is humidified by a humidifier 12. A vapor pressure inside the container 2 is raised, it is restrained that moisture of the developing solution is evaporated, and evaporation heat is not taken away by evaporation. As a result, it is possible to constitute that the temperature of the wafer 6 and the temperature of the developing solution applied to the wafer 6 become constant irrespective of a place.
申请公布号 JPH0629204(A) 申请公布日期 1994.02.04
申请号 JP19920181092 申请日期 1992.07.08
申请人 FUJITSU LTD;KYUSHU FUJITSU ELECTRON:KK 发明人 UCHIDA TOSHIHIRO;ONODERA YASUO
分类号 G03F7/30;H01L21/027;H01L21/30;(IPC1-7):H01L21/027 主分类号 G03F7/30
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