发明名称 |
PHASE SHIFT PHOTO MASK |
摘要 |
A chroma layer (12) on a mask layer (11) is etched with the help of a photo resisting layer (13). A first phase shifting layer (14) is fabricated on the patterned chrome layer (12), a second phase shifting layer (15) on the first phase shifting layer. A second photo resist mask (15a) is built on the second phase shifting layer (15). The first phase shifting layer (14) is etched to form a first phase-shift mask (14a) and a second phase-shift mask (15a).
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申请公布号 |
KR940000918(B1) |
申请公布日期 |
1994.02.04 |
申请号 |
KR19910006834 |
申请日期 |
1991.04.27 |
申请人 |
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHA, JAE - HYON;HAN, O - SOK;CHON, YONG - JIN |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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