发明名称 PHASE SHIFT PHOTO MASK
摘要 A chroma layer (12) on a mask layer (11) is etched with the help of a photo resisting layer (13). A first phase shifting layer (14) is fabricated on the patterned chrome layer (12), a second phase shifting layer (15) on the first phase shifting layer. A second photo resist mask (15a) is built on the second phase shifting layer (15). The first phase shifting layer (14) is etched to form a first phase-shift mask (14a) and a second phase-shift mask (15a).
申请公布号 KR940000918(B1) 申请公布日期 1994.02.04
申请号 KR19910006834 申请日期 1991.04.27
申请人 KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 CHA, JAE - HYON;HAN, O - SOK;CHON, YONG - JIN
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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