| 摘要 |
The present invention relates to a substrate voltage generator for a semiconductor device, comprising an oscillator for generating an oscillating signal to compensate the resistance value with temperature, a voltage pump driver for providing clock signals, a voltage pump for generating substate voltage, a level detector for detecting the substrate voltage, and a oscillating driver for providing the bias voltage, wherein the power consumption in the standby state of semiconductor devices can be reduced and the driving capacity is not variable even though the temperature is changed. |
