发明名称 METHOD FOR FORMING MULTILEVEL WIRING
摘要 PURPOSE:To provide a method for forming a multilevel wiring with high reliability and a good production yield. CONSTITUTION:Two wiring parts 103 and 104, each having two or more lower wirings that are adjacent and insulated to each other are formed on a semiconductor substrate having a step part, and an interlayer insulating film 105 is also formed. The interlayer insulating film 105 is removed until the first and second wiring parts 103 and 104 are exposed. Moreover, a step part 114 generated at the second wiring part 104 is filled with a third insulating film.
申请公布号 JPH0629398(A) 申请公布日期 1994.02.04
申请号 JP19920066819 申请日期 1992.03.25
申请人 TOSHIBA CORP 发明人 SUNADA TAKESHI
分类号 H01L21/768;(IPC1-7):H01L21/90 主分类号 H01L21/768
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